Index Terms-High-power P-iN diodes, thermo-sensitive electrical parameter, reverse recovery charge, junction temperature extraction.Baixe Infeneon transistor igbt e outras Esquemas em PDF para Eletrônica de Potência, somente na Docsity! Cinfineon.
Finally, an experimental comparison of four TSEPs for P-iN diode is presented to verify the feasibility of implementation of proposed TSEP. A 3-D look-up table is calibrated and can be used to estimate the P-iN diode junction operating temperature. The experimental results show that the dependency between diode junction temperature and charge during the reverse recovery current fall time is approximately linear. A double pulse chopper circuit is used to validate the theoretical analysis. In typical inductive half-bridge circuit, the comprehensive analysis of commutation between the upper P-iN diode and lower enabled IGBT, discloses the monotonic relationship among the reverse recovery charge, reverse current fall time, and junction temperature.
Thanks to the specific package of high-power IGBT modules with P-iN diodes, the swept-out charge of a P-iN diode can be measured by the induced voltage v eE on the parasitic inductor L eE between Kelvin and power emitter terminals. It is investigated that the swept-out charge during reverse recovery current fall time is affected by junction temperature variation, which makes the swept-out charge a possible thermo-sensitive electrical parameter (TSEP). This paper proposes a method to extract the junction temperature of high-voltage and high-power P-iN diodes.
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